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GaN Substrates

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GaN Substrates

Name: GaN Substrates
Brand: JOPTEC
Price: 1 USD

Brand Name : JOPTEC

Place of Origin : HEFEI, CHINA

MOQ : 10 PCS

Payment Terms : T/T

Supply Ability : 5000000 PCS/Month

Delivery Time : 30 Days

Packaging Details : Boxes

Material : GaN

Type : GaN-FS-10, GaN-FS-15

Orientation : C-axis(0001) ± 0.5°

TTV : ≤15 µm

BOW : ≤20 µm

Carrier Concentration : >5x1017/cm3

Typical thickness (mm) : N-type, Semi-Insulating

Resistivity(@300K) : < 0.5 Ω•cm, >106 Ω•cm

Usable Surface Area : > 90%

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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but also a well alternative material for high temperature semiconductor devices. Based on the stable physical and chemical properties, GaN is suitable for LED applications (blue, green, UV-light), ultraviolet detectors and optoelectronic high-power and high-frequency devices.

Specification
Type	GaN-FS-10	GaN-FS-15
Size	10.0mm×10.5mm	14.0mm×15.0mm
Thickness	Rank 300, Rank 350, Rank 400	300 ± 25 µm, 350 ± 25 µm, 400 ± 25 µm
Orientation	C-axis(0001) ± 0.5°
TTV	≤15 µm
BOW	≤20 µm
Carrier Concentration	>5x10¹⁷/cm³	/
Conduction Type	N-type	Semi-Insulating
Resistivity(@300K)	< 0.5 Ω•cm	>10⁶ Ω•cm
Dislocation Density	Less than 5x10⁶ cm^-2
Useable Surface Area	> 90%
Polishing	Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
Package	Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

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